Thermal expansion reference data: silicon 300-850 K

作者: R B Roberts

DOI: 10.1088/0022-3727/14/10/003

关键词: InterferometryPolarization (waves)Polycrystalline siliconOptoelectronicsMaterials scienceSiliconThermal expansionResistance thermometer

摘要: Measurements of the coefficient linear thermal expansion pure polycrystalline silicon were made with a polarization interferometer and platinum resistance thermometer an estimated error less than 0.01 × 10-6 K-1.

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