FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films
作者： J.C. Conde , E. Martín , S. Stefanov , P. Alpuim , S. Chiussi
DOI: 10.1016/J.APSUSC.2012.01.050
关键词:
摘要: a b s t r c UV excimer laser annealing (UV-ELA) is an alternative process that, during the last few years, has gained enormous importance for CMOS nano-electronic technologies, with ability to provide films and alloys electrical optical properties fit desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon based on rapid (nanoseconds) formation temperature profiles caused by radiation that absorbed in material lead crystallisation, diffusion solid or even liquid phase. To achieve optimize parameters involved processing hydrogenated nanocrystalline (nc-Si:H) UV-ELA, numerical analysis finite element method (FEM) multilayer structure been performed. structures, consisting thin alternating a-Si:H(10 nm) n-doped nc-Si:H(60 layers, deposited glass substrate, also experimentally analyzed. Temperature 193 nm 25 ns pulse length energy densities rang- ing from 50 mJ/cm 2
harvard.edu
elsevier.com
core.ac.uk 
sci-hub.se 参考文章(36)
J. C. Miller, R. F. Haglund, Laser ablation and desorption Academic Press. ,(1998)
Victor E. Borisenko, Peter J. Hesketh, Rapid Thermal Processing of Semiconductors ,(1997)
J.C. Conde, E. Martín, F. Gontad, S. Chiussi, L. Fornarini, B. León, Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100) Thin Solid Films. ,vol. 518, pp. 2431- 2436 ,(2010) , 10.1016/J.TSF.2009.09.135
John J. Boland, Role of hydrogen desorption in the chemical-vapor deposition of Si(100) epitaxial films using disilane Physical Review B. ,vol. 44, pp. 1383- 1386 ,(1991) , 10.1103/PHYSREVB.44.1383
S. de Unamuno, E. Fogarassy, A thermal description of the melting of c- and a-silicon under pulsed excimer lasers Applied Surface Science. ,vol. 36, pp. 1- 11 ,(1989) , 10.1016/0169-4332(89)90894-5
Rosalía Serna, A Blasco, T Missana, Javier Solís Céspedes, Carmen N Afonso, A Rodriguez, T Rodriguez, MF Da Silva, All laser‐assisted heteroepitaxial growth of Si0.8Ge0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification Applied Physics Letters. ,vol. 68, pp. 1781- 1783 ,(1996) , 10.1063/1.116665
G. Fortunato, V. Privitera, A. La Magna, L. Mariucci, M. Cuscunà, B.G. Svensson, E. Monakhov, M. Camalleri, A. Magrì, D. Salinas, F. Simon, Excimer Laser annealing for shallow junction formation in Si power MOS devices Thin Solid Films. ,vol. 504, pp. 2- 6 ,(2006) , 10.1016/J.TSF.2005.09.017
Joshua Pelleg, Brian M. Ditchek, Diffusion of P in a novel three‐dimensional device based on Si–TaSi2 eutectic Journal of Applied Physics. ,vol. 73, pp. 699- 706 ,(1993) , 10.1063/1.353325
Sherif Sedky, Ann Witvrouw, Kris Baert, Poly SiGe, a promising material for MEMS monolithic integration with the driving electronics Sensors and Actuators A-physical. ,vol. 97, pp. 503- 511 ,(2002) , 10.1016/S0924-4247(01)00811-1
A. Martinez-Gil, A. Rota, T. Maroutian, B. Bartenlian, P. Beauvillain, E. Moyen, M. Hanbücken, Nano-patterned silicon surfaces for the self-organised growth of metallic nanostructures Superlattices and Microstructures. ,vol. 36, pp. 235- 243 ,(2004) , 10.1016/J.SPMI.2004.08.006