Growth of crystalline LaAlO3 by atomic layer deposition
作者： Thong Q. Ngo , Martin D. McDaniel , Agham Posadas , Alexander A. Demkov , John G. Ekerdt
DOI: 10.1117/12.2045532
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摘要: Crystalline lanthanum aluminate (LAO) films were grown epitaxially on SrTiO 3 (001) and Si(001) with a buffer layer of four unit cells by atomic deposition. The was molecular beam epitaxy. Tris(N,N’-diisopropylformamidinate)-lanthanum, trimethylaluminum, water as co-reactants employed at 250 °C for Films characterized using ex-situ reflection high-energy electron diffraction, X-ray diffraction in-situ photoelectron spectroscopy. as-deposited LAO amorphous. Different annealing conditions necessary to realize crystalline because different degrees tensile strain between the or substrate. When (001), lattice mismatch 2.9%, temperatures 750 2 h necessary. realized 600 under vacuum -buffered Si(001), 1.3%. By keeping temperature relatively low (2 vacuum), interfacial amorphous STO/Si interface minimized about one monolayer an abrupt maintained.
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