Surface-controlled growth of LaAlO3 thin films by atomic layer epitaxy
作者： Minna Nieminen , Timo Sajavaara , Eero Rauhala , Matti Putkonen , Lauri Niinistö
DOI: 10.1039/B102677C
关键词:
摘要: LaAlO3 thin films were deposited by atomic layer epitaxy (ALE) from β-diketonate-type precursors La(thd)3 and Al(acac)3. Ozone was used as an oxygen source. Films grown on soda lime glass, Si(100), MgO-buffered sapphire SrTiO3(100) substrates. The influence of the La∶Al precursor pulsing ratio film growth quality in temperature range 325–400 °C studied detail. Stoichiometry impurity levels measured using RBS, TOF-ERDA XPS while chemical type carbon identified FTIR. XRD AFM to determine crystallinity surface morphology. transparent uniform their thickness could be accurately controlled number deposition cycles. as-deposited amorphous but became crystalline upon annealing at 900 °C. annealed films Si(100) MgO(111)-buffered substrates had a preferred (110) orientation whereas those MgO(100)-buffered showed (100) orientation. Epitaxial smooth obtained after 900 °C, verified measurement X-ray rocking curve (200) reflection roughness. Stoichiometric contained <1.9 atom% about 0.3 hydrogen impurities.
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