Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films

摘要: Thin films of MgO were deposited by atomic layer epitaxy (ALE) from bis(cyclopentadienyl)magnesium and water using soda lime glass Si(100) as substrates. Deposition parameters studied in the temperature range 100–400 °C. A plateau surface-controlled growth was observed at 200–300 °C with a rate 1.16 A cycle −1 on both substrates which is almost magnitude higher than ALE obtained β-diketonate-type precursors ozone or hydrogen peroxide. The more detail 300 °C to confirm nature deposition process. analysed time-of-flight elastic recoil detection analysis (TOF-ERDA), X-ray photoelectron spectroscopy (XPS), diffraction (XRD) force microscopy (AFM) determine chemical composition, crystallinity crystallite orientation well surface morphology. Films below 200 °C amorphous but above that polycrystalline (111) dominant According XPS TOF-ERDA measurements stoichiometric when 200–400 °C. Impurity levels 0.1 at% for carbon 0.5 at% detected 300 °C. Film roughness dependent temperature. carried out 250–350 °C produced rms values 8–10 nm whereas this 2–4 nm.