Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds

作者: Giovanni Antonio Foggiato , Hui Wang , Chung J. Lee

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摘要: Intermetal dielectric (IMD) and interlevel (ILD) that have constants (K) ranging from 2.0 to 2.6 are prepared plasma or photon assisted CVD (PACVD) transport polymerization (TP). The low K (LKD) materials PACVD TP of some selected siloxanes F-containing aromatic compounds. thin films combine barrier adhesion layer functions with constant functions, thus eliminating the necessity for separate layers, layers constant. LKD disclosed in this invention particularly useful <0.18 μm ICs, when copper is used as conductor future ICs.

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