作者: Subramanian Kalyanaraman , Rajapandi Vettumperumal , Rajalingam Thangavel , None
DOI: 10.3938/JKPS.62.804
关键词:
摘要: Undoped and lithium-doped zinc oxide (ZnO) thin films have been deposited on sapphire substrates (0001) using the sol-gel method. The effect of doping with various percentages Li at a particular annealing temperature 600 °C is studied. samples are characterized Xray diffraction (XRD), scanning electron microscopy (SEM), micro-photoluminescence (µ-PL) Raman polarized (PR) spectroscopy. X-ray micro-Raman spectroscopy confirm presence lithium substitution for zinc. wurtzite structure lattice retained, five multiple phonon modes observed. values depolarization ratios calculated from data. Photoluminescence shows strong emission peak in near UV 3.276 eV negligible visible emission. PL positions doped nearly coincide each other, suggesting very similar recombination mechanisms nanocrystals.