作者: N. Yu. Bykov , A. I. Safonov , D. V. Leshchev , S. V. Starinsky , A. V. Bulgakov
DOI: 10.1134/S1063784219060045
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摘要: The synthesis of thin silver films by the gas-jet deposition method is experimentally and theoretically studied. When metal deposited onto silicon substrates from a supersonic jet vapor with helium carrier gas, nanostructured 3−30 nm size nanostructures are obtained for 1230−1380 K range source temperatures. data on Ag–He dynamics when it expanded into vacuum (velocity, temperature, concentration, flux particles substrate) depending parameters at (vapor flow rate gas) direct simulation Monte Carlo. optimal rates, efficiency maximal, determined. It established that presence background gas in chamber pressure higher than 1 Pa decreases substrate, simple way its evaluation proposed. Conditions formation clusters determined using simulation. shown experimental regimes there no jet, observed formed substrate surface.