作者: Cao Zexian
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摘要: Hydrogen-free diamondlike carbon films were prepared on Si(100) with electron cyclotron wave-resonance plasma, which serves to sputter the graphite target and simultaneously bombard growing surface. Direct penetration of postionized atoms (up 140 eV) in addition momentum transfer from Ar plasma facilities formation Ta–C structure. Surface morphology, mechanical, optical properties deposits examined respect ion energy. Atomic force microscope images revealed island morphology a typical root-mean-square roughness 20 nm. A maximum content about 70% for fourfold-bonded structure was estimated Raman profiles, giving rise micro hardness 60 ± 5 GPa.