Temperature dependent shape transformation of Ge nanostructures by the vapor-liquid-solid method
作者： K. Das , A. K. Chakraborty , M. L. NandaGoswami , R. K. Shingha , A. Dhar
DOI: 10.1063/1.2718282
关键词:
摘要: A vapor-liquid-solid method has been used to study the temperature dependent growth mechanism of Ge nanostructures on Au-coated Si (100) substrates. The formation nanodots, nanorods, and nanowires observed at different temperatures. diameter grown is found be varying from 40 80 nm that nanorods 70 90 nm, respectively. comparative done three types samples using x-ray diffraction Raman spectroscopy. Photoluminescence spectra exhibit a broad emission band around 2.6 eV due oxide related defect states.
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