The characteristics of intimate AuInyAl1 − yAs Schottky diodes: a mismatch dependence study
作者： SA Clark , SP Wilks , RH Williams , JK Luo , F Peiro
DOI: 10.1016/0921-5107(94)90100-7
关键词:
摘要: Abstract The electrical properties of intimate AuIn y Al 1 − As(100) Schottky diodes were studied as a function In As alloy composition over range (0.49 =0.52 with the InP(100) substrate. Highly ideal exhibiting highest reported barriers (0.82 eV), measured by current-voltage ( I–V ) technique, obtained on epilayers most closely lattice matched to InP. Diodes formed more mismatched progressively less and exhibited lower barrier heights. origins this departure from ideality investigated low temperature measurements, indicating that tunnelling via structural defects in depletion region may be greater significance samples mismatch. Furthermore, observations transmission electron microscopy layers under similar conditions revealed presence mismatch dependent, quasi-periodic fluctuations across semiconductor surface. Using double-crystal X-ray diffraction, amplitude compositional modulation corresponding spatial band gap estimated, possible mechanism which effective height is lowered As/InP increased.
elsevier.com
sci-hub.se 参考文章(15)
S. Sasa, Y. Nakata, Y. Sugiyama, T. Fujii, E. Miyauchi, Electronic properties of two-dimensional electron gas in pseudomorphic InxGa1−xAs/N-In0.52Al0.48As heterostructures Journal of Crystal Growth. ,vol. 95, pp. 189- 192 ,(1989) , 10.1016/0022-0248(89)90379-5
J I Davies, P D Hodson, A C Marshall, M D Scott, R J M Griffiths, Improvements in the structural quality of Al0.48In0.52As grown by low pressure metal-organic vapour-phase epitaxy Semiconductor Science and Technology. ,vol. 3, pp. 223- 226 ,(1988) , 10.1088/0268-1242/3/3/011
F. Turco, J. Massies, Strain‐induced In incorporation coefficient variation in the growth of Al1−xInxAs alloys by molecular beam epitaxy Applied Physics Letters. ,vol. 51, pp. 1989- 1991 ,(1987) , 10.1063/1.98320
B. Wakefield, M. A. G. Halliwell, T. Kerr, D. A. Andrews, G. J. Davies, D. R. Wood, Direct energy gap of Al1−xInxAs lattice matched to InP Applied Physics Letters. ,vol. 44, pp. 341- 343 ,(1984) , 10.1063/1.94726
C. L. Lin, P. Chu, A. L. Kellner, H. H. Wieder, Edward A. Rezek, Composition dependence of Au/InxAl1−xAs Schottky barrier heights Applied Physics Letters. ,vol. 49, pp. 1593- 1595 ,(1986) , 10.1063/1.97290
F. Gueissaz, M. Gailhanou, R. Houdré, M. Ilegems, Measurements of Al-AlInAs Schottky barriers prepared in situ by molecular beam epitaxy Applied Physics Letters. ,vol. 60, pp. 1099- 1101 ,(1992) , 10.1063/1.106456
S.A. Clark, J.E. Macdonald, D.I. Westwood, R.H. Williams, Relaxation in InxGa1-xAs/InP for compressive and tensile strain Journal of Crystal Growth. ,vol. 121, pp. 743- 750 ,(1992) , 10.1016/0022-0248(92)90582-4
H. Ohno, C. E. C. Wood, L. Rathbun, D. V. Morgan, G. W. Wicks, L. F. Eastman, GaInAs‐AlInAs structures grown by molecular beam epitaxy Journal of Applied Physics. ,vol. 52, pp. 4033- 4037 ,(1981) , 10.1063/1.329212
J. K. Luo, H. Thomas, S. A. Clark, R. H. Williams, The effect of growth temperature on the electrical properties of AlInAs/InP grown by molecular beam epitaxy and metal-organic chemical-vapor deposition Journal of Applied Physics. ,vol. 74, pp. 6726- 6733 ,(1993) , 10.1063/1.355069
P. Chu, C.L. Lin, H.H. Wieder, Schottky-barrier height of In0.43Al0.57As Electronics Letters. ,vol. 22, pp. 890- 892 ,(1986) , 10.1049/EL:19860607