Improvements in the structural quality of Al0.48In0.52As grown by low pressure metal-organic vapour-phase epitaxy
作者： J I Davies , P D Hodson , A C Marshall , M D Scott , R J M Griffiths
DOI: 10.1088/0268-1242/3/3/011
关键词: Thin film 、 Epitaxy 、 Inorganic compound 、 Chemistry 、 Diode 、 Crystal growth 、 Schottky barrier 、 Doping 、 Optoelectronics 、 Optics 、 Metalorganic vapour phase epitaxy
摘要: High quality Al0.48In0.52As layers with specular morphology and narrowest reported X-ray linewidths of 24 seconds arc have been grown on InP substrates by LP MOVPE at temperatures 680-710 degrees C. Background carrier concentrations were in the range 8*1515-4*1016 cm-3 room temperature mobilities as high 1900 cm2 V-1 s-1 for growth under optimum conditions. Doping 1017-2*1018 was achieved using a H2S/H2 mixture. Improvements structural electrical concurrent successful Schottky barrier measurements where heights up to phi B=0.73 eV obtained from C-V diodes evaporated PtAu. These results important implications development Ga0.47In0.53As/Al0.48As HEMTS InP-based opto-electronic devices.
sci-hub.se 参考文章(25)
Kazuo Nakajima, Toshiyuki Tanahashi, Kenzo Akita, Liquid phase epitaxial growth of lattice‐matched Al0.48In0.52As on InP Applied Physics Letters. ,vol. 41, pp. 194- 196 ,(1982) , 10.1063/1.93459
T. Itoh, T. Griem, G.W. Wicks, L.F. Eastman, Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures Electronics Letters. ,vol. 21, pp. 373- 374 ,(1985) , 10.1049/EL:19850266
K. Y. Cheng, A. Y. Cho, Silicon doping and impurity profiles in Ga0.47In0.53As and Al0.48In0.52As grown by molecular beam epitaxy Journal of Applied Physics. ,vol. 53, pp. 4411- 4415 ,(1982) , 10.1063/1.331224
Y. Kawamura, H. Asahi, K. Wakita, InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxy Electronics Letters. ,vol. 20, pp. 459- 460 ,(1984) , 10.1049/EL:19840321
M. Kamada, T. Kobayashi, H. Ishikawa, Y. Mori, K. Kaneko, C. Kojima, High-transconductance AlInAs/GaInAs HIFETs grown by MOCVD Electronics Letters. ,vol. 23, pp. 297- 298 ,(1987) , 10.1049/EL:19870216
A.J. Moseley, M.D. Scott, A.H. Moore, R.H. Wallis, High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm Electronics Letters. ,vol. 22, pp. 1206- 1207 ,(1986) , 10.1049/EL:19860826
J.P. Duchemin, M. Bonnet, F. Koelsch, D. Huyghe, A new method for the growth of GaAs epilayer at low H2 pressure Journal of Crystal Growth. ,vol. 45, pp. 181- 186 ,(1978) , 10.1016/0022-0248(78)90432-3
W. T. Tsang, Al0.48In0.52 As/Ga0.47In0.53 As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm Journal of Applied Physics. ,vol. 52, pp. 3861- 3864 ,(1981) , 10.1063/1.329852
Won‐Pyo Hong, Pallab K. Bhattacharya, Jasprit Singh, Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy Applied Physics Letters. ,vol. 50, pp. 618- 620 ,(1987) , 10.1063/1.98099
Ernesto H. Perea, Clifton G. Fonstad, Maurice Quillec, Solid‐liquid equilibria calculations for LPE of AlvGa1−u−vInuAs on InP Journal of Applied Physics. ,vol. 49, pp. 4577- 4579 ,(1978) , 10.1063/1.325473