High-transconductance AlInAs/GaInAs HIFETs grown by MOCVD

作者： M. Kamada , T. Kobayashi , H. Ishikawa , Y. Mori , K. Kaneko

DOI: 10.1049/EL:19870216

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摘要: We fabricated a lμm-gate-length heterointerface FET (HIFET) using selectively doped AlInAs/GaInAs heterostructure grown by atmospheric-pressure MOCVD. The HIFET showed transconductance as high 530mS/mm at room temperature. This is the highest measurement of ever reported in this system.