GaN/AlGaN ultraviolet/infrared dual-band detector
作者： G. Ariyawansa , M. B. M. Rinzan , M. Alevli , M. Strassburg , N. Dietz
DOI: 10.1063/1.2345226
关键词:
摘要: Group III-V wide band gap materials are widely used in developing solar blind, radiation-hard, high speed optoelectronic devices. A device detecting both ultraviolet (UV) and infrared (IR) simultaneously will be an important tool fire fighting for military other applications. Here a heterojunction UV/IR dual-band detector, where the detection is due to interband/intraband transitions Al0.026Ga0.974N barrier GaN emitter, respectively, reported. The UV threshold observed at 360nm corresponds of barrier, IR response obtained range 8–14μm good agreement with free carrier absorption model.
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