Design and performance of a high frequency silicon carbide inverter
作者： Miaosen Shen , Shashank Krishnamurthy , Mihir Mudholkar
DOI: 10.1109/ECCE.2011.6064038
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摘要: The advantages offered by wide band gap materials enable the design of converters with high power density for performance applications. This paper presents and test results a frequency (400kHz) hard switched two level silicon carbide based three phase inverter. Using device system parasitic models, losses in converter are predicted validated using experimental tests. A calorimetric setup is utilized to accurately measure inverter efficiencies 91% obtained at load 4kVA switching 400kHz.
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