Characterization of subthreshold MOS mismatch in transistors for VLSI systems

作者: Aleksandra Pavasović , Andreas G. Andreou , Charles R. Westgate

DOI: 10.1007/BF01250737

关键词:

摘要: MOS transistor mismatch is revisited in the context of subthreshold operation and VLSI systems. We report experimental measurements from large arrays with device sizes typical for digital analog systems (areas between 9 400μm2). These are fabricated at different production qualified facilities 40-nm gate oxide,n-well andp-well, mask lithography processes. Within small area our test-strips (3 mm2), can be classified into four categories: random variations, “edge,” “striation,” “gradient” effects. The edge effect manifests itself as a dependence current on its position reference to surrounding structures. Contrary what was previously believed, effects extend beyond outer most devices array. striation exhibits position-dependent variation following sinusoidal oscillation space slowly varying frequency. gradient also spatial but much lower When systematic removed data, variations follow an inverse linear square root area.

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