In-Situ Characterization of Carrier Mobility in Field Effect Transistors
DOI: 10.1007/978-1-4613-0817-1_156
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摘要: The Field Effect Transistor (FET) is today the basic element of Very Large Scale Integrated (VLSI) digital systems. FETs are also used in analog circuits for high frequency (microwave) applications. Different types Metal Oxide Semiconductor Transistors (MOSFETs), MEtal (MESFETs) and Modulation Doped (MODFETs).
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