作者: M. Sreekanth , S. Ghosh , P. Srivastava
DOI: 10.1007/S00339-017-1471-7
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摘要: We report the growth of vertically aligned carbon nanotube bundles on Si substrate by thermal chemical vapor deposition technique. Vertical alignment was achieved without any carrier gas or lithography-assisted deposition. Growth has been carried out at 850 °C for different quantities solution xylene and ferrocene ranging from 2.25 to 3.00 ml in steps 0.25 ml a fixed concentration 0.02 gm (ferrocene) per ml. To understand mechanism, concentrations changing only quantity, 0.01 0.03 gm/ml. A tunable vertical multi-walled nanotubes (CNTs) this process examined scanning transmission electron microscopic techniques. Micro-crystalline structural analysis done using Raman spectroscopy. systematic variation field emission (FE) current density observed. The highest FE is seen film grown with 0.02 gm/ml concentration, which attributed better CNTs, less disorder entanglement CNTs surface. qualitatively understood basis self-assembled catalytic particles.