Highly enhanced field emission from copper oxide nanoparticle decorated vertically aligned carbon nanotubes: Role of interfacial electronic structure
作者： M. Sreekanth , P. Srivastava , S. Ghosh
DOI: 10.1016/J.APSUSC.2019.145215
关键词:
摘要: Abstract Field emission (FE) properties of Copper (3 nm and 10 nm) decorated vertically aligned carbon nanotubes (VACNTs) grown on Si substrate before after oxidation are investigated. The current density is found to be the maximum (20 mA/cm2) for 3 nm thick Cu VACNTs oxidation. variation in conventionally monitored FE parameters like work function field enhancement factor cannot explain experimentally determined high its variation. A critical analysis electronic structure reveals that ratio CuO/Cu2O plays an important role controlling density. highly enhanced temporal stability indicate it may used as a potential material electron source future vacuum microelectronic devices.
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