Long-term accelerated current operation of white light-emitting diodes
作者： Takeshi Yanagisawa , Takeshi Kojima
DOI: 10.1016/J.JLUMIN.2004.11.010
关键词:
摘要: Abstract Long-term degradation tests regarding white light-emitting diodes based on InGaN were performed under accelerated current conditions, and the half-life of light's output was estimated. An estimated mean 1.5×10 4 h obtained recommended 20-mA operating condition. The change in emission spectrum found to be slight, color quality considered generally satisfactory over long term.
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G. Meneghesso, S. Levada, E. Zanoni, G. Scamarcio, G. Mura, S. Podda, M. Vanzi, S. Du, I. Eliashevich, Reliability of visible GaN LEDs in plastic package Microelectronics Reliability. ,vol. 43, pp. 1737- 1742 ,(2003) , 10.1016/S0026-2714(03)00289-0
Takeshi Yanagisawa, Estimation of the degradation of InGaN/AlGaN blue light-emitting diodes Microelectronics Reliability. ,vol. 37, pp. 1239- 1241 ,(1997) , 10.1016/S0026-2714(96)00288-0
N. Narendran, Y. Gu, J.P. Freyssinier, H. Yu, L. Deng, Solid-state lighting: failure analysis of white LEDs Journal of Crystal Growth. ,vol. 268, pp. 449- 456 ,(2004) , 10.1016/J.JCRYSGRO.2004.04.071
Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes Applied Physics Letters. ,vol. 64, pp. 1687- 1689 ,(1994) , 10.1063/1.111832
T. Egawa, H. Ishikawa, T. Jimbo, M. Umeno, Optical degradation of InGaN/AlGaN light‐emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 69, pp. 830- 832 ,(1996) , 10.1063/1.117906
Tsuguru Shirakawa, Effect of defects on the degradation of ZnSe-based white LEDs Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 91, pp. 470- 475 ,(2002) , 10.1016/S0921-5107(01)01006-6
Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi, Takashi Tsunekawa, Yoshiyuki Imada, Munehiro Kato, Tsunemasa Taguchi, High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy Japanese Journal of Applied Physics. ,vol. 40, pp. 583- ,(2001) , 10.1143/JJAP.40.L583
P Schlotter, J Baur, Ch Hielscher, M Kunzer, H Obloh, R Schmidt, J Schneider, Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 59, pp. 390- 394 ,(1999) , 10.1016/S0921-5107(98)00352-3
T. Yanagisawa, The degradation of GaAlAs red light-emitting diodes under continuous and low-speed pulse operations Microelectronics Reliability. ,vol. 38, pp. 1627- 1630 ,(1998) , 10.1016/S0026-2714(98)00029-8