Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs
作者： Zhigang Ji , Jian Fu Zhang , Wei Dong Zhang , Ben Kaczer , Stefan De Gendt
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摘要: Interface states play an important role in the performance of MOSFETs, and previous works only addressed within band gap. The implicit assumption is that beyond gap (SBBs) are negligible, but there no experimental evidence supporting it. Because a lack techniques for characterizing SBBs, hardly any information available. central objective this paper to develop technique evaluating SBBs show impact on mobility evaluation. For first time, pulse capacitance-voltage has been used extract quantitatively. It found can reach order 1013 cm-2·eV-1 both conduction- valence-band edges fresh MOSFET. conventional split C-V ignores lead underestimation carrier over 30%. Using newly developed as tool, nitridation Hf-based dielectric stacks assessed. As nitrogen density increases, apparent reduction observed by early originates from higher SBBs. Once taken into account, does not degrade mobility. sensitive process conditions, opens way their minimization.
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