Growth of InAs on micro-?and nano-scale patterned GaAs(001) substrates by molecular beam epitaxy

摘要: Molecular beam epitaxy of InAs on micro-?and nano-scale patterned GaAs(001) substrates was studied. An epilayer grown the micro-scale substrate exhibits islands with {1?1?3}-type facets, and is similar to that flat (unpatterned) substrate. In contrast, preferred growth in direction {1?1?0}-type facets. The thickness dense dislocation networks at interface due strain relaxation reduced by pattern comparison substrate, while for relaxes via formation stacking faults more than dislocations. X-ray diffraction reveals strains 300?nm epilayers are nearly fully relaxed, patterns tend decrease lattice constants epilayer, implying mass transport Ga atoms into from GaAs substrates.