Nanoscale limited area growth of InAs islands on GaAs(001) by molecular beam epitaxy

摘要: Growth of InAs islands on a GaAs(001) substrate patterned with ∼50–200-nm diameter holes in an SiO2 mask overlayer providing selective GaAs nucleation areas is reported. The nanoscale pattern was generated the film by large-area interferometric lithography and dry etching. Two-dimensional, 285-nm period, arrays having heights 10–15 nm three different bottom diameters 50–100, ∼150, ∼200 were selectively grown substrates molecular beam epitaxy. conditions chosen to provide very-low sticking coefficient In atoms surface suppressing volume contribution from migration incident region nearby open areas. Formation spherical-section dots about 50 relying nanoscale-limited area growth demonstrated. As hole increases beyond 150 nm, deviate spherical section self-assembled quantum confined within th...