作者: S.R.J. Brueck , S.H. Zaidi , X. Chen , Z. Zhang
DOI: 10.1016/S0167-9317(98)00032-X
关键词: Materials science 、 Next-generation lithography 、 Optoelectronics 、 Interferometry 、 Resolution (electron density) 、 Optics 、 Laser 、 Photolithography 、 Wavelength 、 Line (formation) 、 Interferometric lithography
摘要: Interferometric lithography is a simple technology for the production of very small features. Using I-line wavelength laser sources (364-nm Ar-ion or 355-nm tripled YAG lasers) dense (1: 1 line: space ratio) periodic structures at 0.125-μm have been demonstrated. Mix-and-match with optical lithography has been demonstrated. Imaging interferometric lithography, a true integration between optical and interferometric lithographies, potentially provides a route to arbitrary structures with a resolution up to 130 nm (dense patterns) at I-line and 65 …