Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy
作者： D. L. Huffaker , C. P. Hains , N. Nuntawong , Y. C. Xin , P. S. Wong
DOI: 10.1063/1.2165415
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摘要: We analyze temperature-dependent photoluminescence (PL) behavior of patterned InAs∕GaAs quantum dots (PQDs) formed by selective area epitaxy using metalorganic chemical vapor deposition. The processing scheme, described here, yields an ensemble electronically isolated PQDs with PL characteristics that significantly differ from self-assembled (SA) QDs since neither a wetting layer nor neighboring are available for coupling. nature the supports non-Fermi (nonequilibrium) carrier distribution which very different compared to Fermi (equilibrium) SAQDs especially at temperatures >100K. Thus, demonstrate constant linewidth within temperature range 80–300K along improved stability intensity in comparison SAQDs. increased allowed electronic isolation may prove important high speed, temperature-insensitive QD laser development.
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