Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots
作者： P S Wong , B L Liang , J Tatebayashi , L Xue , N Nuntawong
DOI: 10.1088/0957-4484/20/3/035302
关键词:
摘要: The device fabrication and integration of nanopatterned quantum dots (PQDs) are realized through the demonstration a broad-area light-emitting diode with PQD active region. involves two growth processes, first to form PQDs by selective-area epitaxy on an SiO2 mask then complete structure after removal. Linear current?voltage characteristics observed sharp turn-on, low leakage current forward resistance. Electroluminescence spectra show intraband quenching emission from 77?K room temperature. Light-current measurements demonstrate external efficiency per comparable self-assembled QDs, thus providing possible route toward individually addressable single QD devices.
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