STM and FIB nano-structuration of surfaces to localise InAs/InP(0 0 1) quantum dots
作者： J. Kapsa , Y. Robach , G. Hollinger , M. Gendry , J. Gierak
DOI: 10.1016/J.APSUSC.2003.11.006
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摘要: Abstract STM and nano-FIB have been used to modify InP(0 0 1) related materials surfaces at nanoscale in order create nucleation sites for quantum dots. has permitted the fabrication of holes as small being 11.2±2.8 nm large 3±0.8 nm deep on AlInAs surfaces. Nano-FIB allowed hole arrays with diameter 87±10 nm, depth 1.5±1 nm, array period 100 nm. FIB-made are stable under annealing, but surface exhibit pollution structural degradations due a direct exposure Ga + ion beam. Holes obtained by both techniques could be suitable
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