Design and realization of a very high-resolution FIB nanofabrication instrument
作者： J. Gierak , A. Septier , C. Vieu
DOI: 10.1016/S0168-9002(98)01541-1
关键词: Resist 、 Low emission 、 Nanolithography 、 Ion beam lithography 、 Physics 、 Length scale 、 Voltage 、 Reproducibility 、 Very high resolution 、 Nanotechnology
摘要: Abstract In this work we detail the design and implementation of a very high-resolution FIB nanofabrication instrument able to deliver 10 nm ion probe (ions Ga + , 30 keV). Some experimental results are presented, showing that resolution can be obtained. Nanolithography on an inorganic resist AlF3 nanoetching thin SiC membranes achieved at length scale. We try demonstrate capabilities improved by increasing extraction voltage LMIS thus leading significant increase axial angular intensity, allowing produce nanoetched structures with ultimate 8 nm, excellent reproducibility homogeneity. The authors also present limit they have encountered when operating under extremely high (17.5 kV) for low emission currents. Finally, performances compared those existing others methods.
harvard.edu
elsevier.com
sci-hub.se 参考文章(21)
E. G. Ramberg, J. Hillier, A. W. Vance, G. A. Morton, Zworykin, V. K. , b., Electron Optics And The Electron Microscope Dr. Meghnad Saha Collection. ,(1945)
Shinji Matsui, Yukinori Ochiai, Focused ion beam applications to solid state devices Nanotechnology. ,vol. 7, pp. 247- 258 ,(1996) , 10.1088/0957-4484/7/3/013
R. L. Seliger, J. W. Ward, V. Wang, R. L. Kubena, A high‐intensity scanning ion probe with submicrometer spot size Applied Physics Letters. ,vol. 34, pp. 310- 312 ,(1979) , 10.1063/1.90786
A. E. Bell, L. W. Swanson, The influence of substrate geometry on the emission properties of a liquid metal ion source Applied Physics A. ,vol. 41, pp. 335- 346 ,(1986) , 10.1007/BF00616057
Albert Septier, Lentilles quadrupolaires sans fer a gradient constant Nuclear Instruments and Methods. ,vol. 7, pp. 217- 218 ,(1960) , 10.1016/0029-554X(60)90135-X
J. Gierak, C. Vieu, H. Launois, G. Ben Assayag, A. Septier, Focused ion beam nanolithography on AlF3 at a 10 nm scale Applied Physics Letters. ,vol. 70, pp. 2049- 2051 ,(1997) , 10.1063/1.118810
C. Vieu, G. Ben Assayag, J. Gierak, Observation and simulation of focused ion beam induced damage Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 93, pp. 439- 446 ,(1994) , 10.1016/0168-583X(94)95632-4
E. Munro, Finite difference programs for computing tolerances for electrostatic lenses Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 6, pp. 941- 948 ,(1988) , 10.1116/1.584329
G L R Mair, Electrohydrodynamic instabilities and the energy spread of ions drawn from liquid metals Journal of Physics D. ,vol. 29, pp. 2186- 2192 ,(1996) , 10.1088/0022-3727/29/8/019
Jon Orloff, High‐resolution focused ion beams Review of Scientific Instruments. ,vol. 64, pp. 1105- 1130 ,(1993) , 10.1063/1.1144104