Focused ion beam nanolithography on AlF3 at a 10 nm scale
作者： J. Gierak , C. Vieu , H. Launois , G. Ben Assayag , A. Septier
DOI: 10.1063/1.118810
关键词:
摘要: We have investigated the potential use of AlF3 thin films (50 nm thick) as negative inorganic resist layers for focused ion beam nanolithography. demonstrate that 10 nm-wide lines can be fabricated using a Ga+ 30 keV incident energy. The sensitivity 1010 Ga+/cm is two orders magnitude lower than polymethylmethacrylate organic resist. emphasize this low associated with exposure mechanism minimize influence tails current distribution within spot.
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