High-field photoluminescence in GaAs single heterojunctions
作者： A.G. Davies , S.A. Brown , R.B. Dunford , E.M. Goldys , R. Newbury
DOI: 10.1016/0921-4526(93)90321-V
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摘要: Abstract Bandgap magneto-photoluminescence is used to study the optical signature of a high-quality, low-density GaAs-AlGaAs heterojunction in integer QHE, fractional QHE and Wigner regimes. In extreme quantum limit an intense, new spectral feature observed emerge for v 1 5 , temperature dependence which define two characteristic temperatures, Tc1 Tc2. The boundary formed by lower mapping, Tc1, (B, T)-plane correlates well with electron liquid-solid transition established other techniques.
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