Effect of focused ion beam deposition induced contamination on the transport properties of nano devices.
作者： Yann-Wen Lan , Wen-Hao Chang , Yuan-Chih Chang , Chia-Seng Chang , Chii-Dong Chen
DOI: 10.1088/0957-4484/26/5/055705
关键词:
摘要: Focused ion beam (FIB) deposition produces unwanted particle contamination beyond the point. This is due to FIB having a Gaussian distribution. work investigates spatial extent of this and its influence on electrical properties nano-electronic devices. A correlation study performed carbon-nanotube (CNT) devices manufactured using deposition. The are observed transmission electron microscopy (TEM) these images correlated with device characteristics. To discover how far Pt-nanoparticle occurs along CNT after contact careful TEM inspections performed. results show efficiently improves contact; however, practice accompanied by serious near points. These contaminants include metal particles amorphous elements originating from precursor gases residual water molecules in vacuum chamber. Pt-contamination extends for approximately 2 μm point cause current fluctuations alter transport characteristics It recommended that nano-device fabrication at distance greater than an contact.
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