Stacking fault induced tunnel barrier in platelet graphite nanofiber
作者： Yann-Wen Lan , Wen-Hao Chang , Yuan-Yao Li , Yuan-Chih Chang , Chia-Seng Chang
DOI: 10.1063/1.4895787
关键词: Nanotechnology 、 Tunnel junction 、 Transmission electron microscopy 、 Electron diffraction 、 Materials science 、 Tunnel effect 、 Quantum tunnelling 、 Graphene 、 Coulomb blockade 、 Optoelectronics 、 Stacking fault
摘要: A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy diffraction pattern reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting alternating small-large Coulomb blockade diamonds, suggesting that there are charging islands coupled together through tunnel junction. Based on these findings, we propose stacking fault can behave as barrier for conducting electrons responsible the observed double-island single transistor characteristics.
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