Full field chemical imaging of buried native sub-oxide layers on doped silicon patterns

摘要: Abstract Fully energy-filtered X-ray photoelectron emission microscopy is used to analyze the spatial distribution of silicon sub-oxide structure at SiO 2 /Si interface as a function underlying doping pattern. Using spectroscopic pixel-by-pixel curve fitting analysis, we obtain binding energy and intensity distributions over full field view. Binding maps for each oxidation state are obtained with resolution 120 nm. Within framework five-layer model, experimental data quantitative layer thickness also their p–n junctions. Variations in thicknesses found be linked level type doping. The procedure, which takes into account instrumental artefacts, enables analysis 3D dataset.