作者: M. Lazzarino , S. Heun , B. Ressel , K. C. Prince , P. Pingue
DOI: 10.1063/1.1509121
关键词:
摘要: Atomic force microscope (AFM) induced local oxidation is a versatile and promising nanofabrication process used successfully to produce quantum devices. Nevertheless, little information available on the chemical structural properties of grown oxide. We address this open issue by spectromicroscopic study nanoscopic oxide patterns AFM anodic n-type silicon substrate. show that produces chemically uniform, stoichiometric SiO2, its do not depend applied voltage. The observed electrostatic shift binding energies allows simple estimation electrical