X-ray induced variation of the chemistry of GaAs/AlAs oxide nanostructures
作者： G. Mori , M. Lazzarino , D. Ercolani , G. Biasiol , A. Locatelli
DOI: 10.1016/J.NIMB.2005.12.005
关键词: Nanostructure 、 Spectroscopy 、 Analytical chemistry 、 X-ray photoelectron spectroscopy 、 Oxide 、 Epitaxy 、 Chemistry 、 Photoemission spectroscopy 、 Electron spectroscopy 、 Chemical composition 、 Inorganic chemistry
摘要: Abstract The variation of the surface chemical composition nanostructures fabricated by local anodic oxidation (LAO) on epitaxial GaAs/AlAs/GaAs layered structures is investigated means laterally-resolved photoemission spectroscopy. Our analysis evidences unexpected presence Al compounds located in topmost layers LAO oxide structures. We studied evolution such as a function X-ray exposure time (photon energy hν = 130 eV) and we found reduction amount Ga with respect to compounds.
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