High-Resolution Synchrotron-Radiation Core-Level Spectroscopy of Decapped Gaas(100) Surfaces
作者： G. Le Lay , D. Mao , A. Kahn , Y. Hwu , G. Margaritondo
DOI: 10.1103/PHYSREVB.43.14301
关键词:
摘要: We report a high-resolution core-level spectroscopy study of the (4 x 2)-c(8 2) GaAs(100) surface prepared by thermal decapping surfaces grown molecular-beam epitaxy. Ga and As 3d core levels are analyzed using very strict parameter conditions, compared with taken from cleaved GaAs(110). Two components resolved in spectra while only one component is necessary for As. tentatively assign two to inequivalent dimers unit cell; assigned threefold-coordinated second-layer next missing row dimers. The position Fermi level on decapped n-type p-type substrates investigated detail. characterization these clean (100) provides firm basis further studies electrical chemical properties metal-semiconductor interfaces.
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