Low-temperature formation of metal/molecular-beam epitaxy-GaAs(100) interfaces: Approaching ideal chemical and electronic limits

摘要: We report soft x‐ray photoemission studies of metal/molecular‐beam epitaxy (MBE)‐GaAs(100) interfaces formed at low temperature. Our results indicate that rectifying barrier heights are proportional to the metal work function in accordance with Schottky’s original description metal–semiconductor contacts. These confirm predictions a self‐consistent model interfaces, and suggest metal‐induced gap states native defect mechanisms not major factors determining Fermi level energy ‘‘ideal’’ interfaces. attribute deviations from ideal Schottky limit behavior observed for room temperature metallization‐induced atomic relaxations (rather than electronic relaxations) occurring present useful methodology analyzing properties The pronounced differences height formation between MBE vs melt‐grown GaAs can evidence role de...