Optical spectroscopy of ordered GaAs(001) surfaces obtained by sulfide passivation
作者： V.L. Berkovits , D. Paget
DOI: 10.1016/0169-4332(93)90727-S
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摘要: Abstract Reflectance anisotropy (RA) spectroscopy has been used to study at 300 K the intrinsic optical transitions on (Na 2 ·9H O) and (NH 4 ) S-treated GaAs(001) surfaces for unpassivated surfaces. As a function of annealing temperature, we observe arsenic sulfur dimers oriented along [110] direction as well gallium diners [110]. The differences surface treatments are related chemistry passivated amount residual impurities. We obtain structures with reduced band bending, stable down 120 consistent known arsenic-rich gallium-rich reconstructions.
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