Al intermediate oxidation states observed by core level photoemission spectroscopy
作者： G. Faraci , S. La Rosa , A. R. Pennisi , Y. Hwu , G. Margaritondo
DOI: 10.1063/1.359866
关键词: Oxide 、 Overlayer 、 X-ray photoelectron spectroscopy 、 Photoemission spectroscopy 、 Substrate (electronics) 、 Binding energy 、 Oxidation state 、 Deposition (law) 、 Materials science 、 Analytical chemistry
摘要: Aluminum oxidation states in stoichiometric or substoichiometric configuration are studied by core level photoemission spectroscopy on different substrates (SiO2, graphite). They compared with recent results reported for the interface Si–Aln+O. Three Al have been identified and their space distribution (binding energy, intensity, width) is determined region from substrate up to surface of a thick overlayer. The Al2+–O intermediate state shown be confined at interface; contrary, Al1+–O oxide (alumina) present beyond region. From attenuation peak, deposition morphology length photoelectrons deduced.
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