Al2O3 on Si(100) and Ge(100)
作者： C.A. Schug , B. Konrad , B. Eisenhut , E. Bertel , W. Steinmann
DOI: 10.1016/0039-6028(90)90423-6
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摘要: Abstract Sintered alumina was evaporated onto Si(100) and Ge(100) substrates by means of an electron beam evaporator. The samples were investigated Auger spectroscopy, low energy diffraction photoelectron spectroscopy. deposited films found to consist stoichiometric Al2O3 grow in islands, which coalesce for coverages larger than seven monolayers, approximately. All deposits could be shown amorphous.
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