Phase transformations induced by spherical indentation in ion-implanted amorphous silicon
作者： B. Haberl , J. E. Bradby , S. Ruffell , J. S. Williams , P. Munroe
DOI: 10.1063/1.2210767
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摘要: The deformation behavior of ion-implanted (unrelaxed) and annealed (relaxed) amorphous silicon (a-Si) under spherical indentation at room temperature has been investigated. It found that the mode depends critically on both preparation film scale mechanical deformation. Ex situ measurements, such as Raman microspectroscopy cross-sectional transmission electron microscopy, well in electrical measurements reveal occurrence phase transformations all relaxed a-Si films. preferred unrelaxed is plastic flow, only certain high load conditions can this state be forced to transform. In have revealed more detail transformation process during loading unloading. We used ELASTICA simulations obtain estimates depth metallic a function load, good agreement with experiment. On unloading, ...
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