Mechanical properties of ion-implanted amorphous silicon

摘要: We used nanoindentation coupled with finite element modeling to determine the mechanical properties of amorphous Si layers formed by self-ion implantation crystalline at approximately 100 K. When effects harder substrate on response indentation were accounted for, phase was found have a Young’s modulus 136 ± 9 GPa and hardness 10.9 0.9 GPa, which 19% 10% lower than corresponding values for Si. The agrees well pressure known induce transition in denser β–Sn-type structure This controls yielding under compressive stress during indentation, just as it does After annealing 1 h 500 °C relax structure, increase slightly 146 11.6 1.0 GPa. Because elastic are only moderately reduced respect Si, may be useful alternative material components Si-based microelectromechanical systems if other improved needed, such increased fracture toughness.