Microstructure and nanomechanical properties of Fe+ implanted silicon
作者： B. Nunes , S. Magalhães , N. Franco , E. Alves , R. Colaço
DOI: 10.1016/J.APSUSC.2013.07.129
关键词: Amorphous solid 、 Metallurgy 、 Wafer 、 Materials science 、 Ion 、 Composite material 、 Recrystallization (metallurgy) 、 Annealing (metallurgy) 、 Silicon 、 Ion implantation 、 Microstructure
摘要: Abstract Silicon wafers were implanted with iron ions at different fluences (from 5 × 10 15 up to 2 × 10 17 cm −2 ), followed by annealing treatments temperatures from 550 °C 1000 °C, aiming evaluating the nanomechanical response of samples and its relation microstructural features characteristics modified layer. After implantation, a homogeneous amorphous layer thickness between 200 nm 270 nm is formed, without damaging surface smoothness neither introducing defects. annealing, recrystallization formation nanometric precipitates silicides observed, corresponding changes in hardness stiffness These results indicate that ion implantation silicon proper temperatures, can be an alternative route deeper explored what concerns precise control microstructure and, thus, improvement properties silicon.
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