A Wideband LNA for Wireless Multistandard GSM/WiMAX Receiver in 130nm CMOS Process

摘要: A wideband common-gate Low-Noise Amplifier (LNA) is designed and analyzed in $0.13\mu \mathbf{m}$ CMOS technology. Owing to positive feedback a novel feed-forward technique, the proposed LNA has led very low Noise Figure (NF) without sacrificing linearity. The technique includes AC coupling input signal gate nodes of cascode stage transistors, addition usual CG transistors excitement. Simultaneously, shunt samples voltage at source node contributes overall impedance match LNA. gain 19.4 dB been achieved over wide frequency band 0.9-5.5 GHz with minimum NF 2.83 dB. Input P1dB IIP3 are −14 dBm −7 dBm, respectively. Utilizing supply 1.2 V, power consumption 5.2 mW. may be used for implementation multi-standard front-end supporting GSM900/1800 mobile WiMAX standards, simultaneously.