作者: Eugene D. Savoye , Barry E. Burke
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摘要: Provided is a method of fabrication blooming control structure for an imager. The produced in semiconductor substrate which configured electrical charge collection region. region to accumulate that photogenerated the substrate, up characteristic capacity. A drain laterally spaced from includes extended path conductivity type and level are selected conducting excess capacity away barrier be adjacent spacing regions by width. This width corresponds acute impurity implantation angle with substrate. based on produce corresponding potential between regions. very precisely defined angle, optionally addition rotation implantation, as well non-vertical sidewall profile masking layer.