Formation of trenches having different profiles

摘要: Trenches having different profiles are formed in a material, such as semiconductor substrate, by forming resist pattern windows with at least two widths. An etchant, Fluorine, is implanted into portions of the using an ion implantation technique. A tilt angle and azimuth beam chosen that Fluorine ions cannot pass through narrower but can wider to impinge on underlying substrate. The substrate then subjected anisotropic etching process. Accordingly, regions exposed between narrow-width etched produce trenches highly vertical profiles. wide-width windows, including etchant ions, preferentially tapered