Controlled ion implant damage profile for etching
作者： Carol I. H. Ashby , George W. Arnold , Paul J. Brannon
DOI:
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摘要: A process for etching a material such as LiNbO 3 by implanting ions having plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted with etchant. The various are selected produce implant damage substantially uniformly throughout entire depth zone thus tailoring vertical profile damaged zone.
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