Measurement and analysis of photocurrent transient characteristics for hydrogenated amorphous-silicon photodiodes
作者： H. Nozaki , T. Kamimura , N. Sakuma , H. Ito
DOI: 10.1109/16.40942
关键词:
摘要: The relations between the photocurrent transient after end of steady-state illumination for hydrogenated amorphous silicon photodiodes and related film properties undoped prepared by mercury-sensitized photochemical vapor deposition are investigated. characteristic indicates significant correlations with properties, such as electron drift mobility ( mu /sub d/), dangling bond density (N/sub s/), a minimum in states near Fermi level min/), space-charge i/). decay decreases increasing d/ decreasing N/sub s/, M/sub min/, i/. This result was confirmed model analysis. >
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sci-hub.se 参考文章(18)
K.A. Conrad, E.A. Schiff, Transient photocurrent saturation and deep trapping in hydrogenated amorphous silicon Solid State Communications. ,vol. 60, pp. 291- 294 ,(1986) , 10.1016/0038-1098(86)90468-0
Kazuhiko Suzuki, Yohsuke Yukawa, Hiroaki Takao, Koichi Kuroiwa, Yasuo Tarui, Characterization of Photo-CVD a-Si:H Films by Thin-Film Transistor Structure Japanese Journal of Applied Physics. ,vol. 25, pp. L811- L813 ,(1986) , 10.1143/JJAP.25.L811
M. Hack, M. Shur, Theoretical modeling of amorphous silicon‐based alloy p‐i‐n solar cells Journal of Applied Physics. ,vol. 54, pp. 5858- 5863 ,(1983) , 10.1063/1.331812
Takeshi Inoue, Makoto Konagai, Kiyoshi Takahashi, Photochemical vapor deposition of undoped and n‐type amorphous silicon films produced from disilane Applied Physics Letters. ,vol. 43, pp. 774- 776 ,(1983) , 10.1063/1.94501
Hideyo Okushi, Gap states in phosphorus-doped amorphous silicon studied by isothermal capacitance transient spectroscopy Philosophical Magazine Part B. ,vol. 52, pp. 33- 57 ,(1985) , 10.1080/13642818508243164
Tatsuya Tanaka, Woo Yeol Kim, Makoto Konagai, Kiyoshi Takahashi, Amorphous silicon solar cells fabricated by photochemical vapor deposition Applied Physics Letters. ,vol. 45, pp. 865- 867 ,(1984) , 10.1063/1.95435
T. Tiedje, A. Rose, A physical interpretation of dispersive transport in disordered semiconductors Solid State Communications. ,vol. 37, pp. 49- 52 ,(1981) , 10.1016/0038-1098(81)90886-3
H. Kida, K. Hattori, H. Okamoto, Y. Hamakawa, Measurement of deep states in undoped amorphous silicon by current transient spectroscopy Journal of Applied Physics. ,vol. 59, pp. 4079- 4086 ,(1986) , 10.1063/1.336715
C.R. Wronski, B. Abeles, T. Tiedje, G.D. Cody, Recombination centers in phosphorous doped hydrogenated amorphous silicon Solid State Communications. ,vol. 44, pp. 1423- 1426 ,(1982) , 10.1016/0038-1098(82)90023-0
B. Abeles, C.R. Wronski, Y. Goldstein, G.D. Cody, Capture cross-section and density of deep gap states in a−SiHx schottky barrier structures Solid State Communications. ,vol. 41, pp. 251- 253 ,(1982) , 10.1016/0038-1098(82)91043-2