Theoretical modeling of amorphous silicon‐based alloy p‐i‐n solar cells

摘要: We have developed a computer model of amorphous silicon based alloy p‐i‐n solar cells on the solution electron and hole continuity equations, together with Poisson’s equation. This takes into account spatial energy variations localized state spectrum, nonuniform doping profiles, optical excitation. Heavily doped p+ n+ regions are used as contacts, these enable us to realistically set up boundary conditions. Appropriate boron profiles been added intrinsic layer, density states being dependent concentration. The computed dark light current–voltage characteristics in good agreement experimental data. In particular, our results indicate importance residual layer for illuminated through show that optimized devices carrier back diffusion is not significant effect open circuit voltage determined by recombinatio...