Simplified method for the evaluation of the reverse dark current–voltage characteristic of thin film devices
作者： Francisco A. Rubinelli , Marcelo De Greef
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摘要: An algorithm that simplifies the evaluation of reverse dark current–voltage (J–V) characteristic semiconductor thin film devices is presented. This algorithm, recognized with symbols “0KRDA”, an approximation SRH formalism can be used when dangling bond density modeled either Uniform Density Model or Defect Pool Model. The 0KRDA designed to replace 0K-Simmons–Taylor (0KSTA) in reversed biased junctions operating under conditions. dependence current J respect applied voltage V predicted well replicated by 0KRDA. small differences obtained calculated currents removed neglecting contribution gap states energies closer than kT/5 intrinsic trap level. transport physic controlling shape J–V curves more easily visualized
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